Areal density capability improvement with a main pole skin

ABSTRACT

The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.16/009,046 filed Jun. 14, 2018, which application claims priority toU.S. Provisional Patent Application Ser. No. 62/606,143, filed on Jun.23, 2017, both of which herein are incorporated by reference.

BACKGROUND Field of the Disclosure

Embodiments of the present disclosure generally relate to data storagedevices, and more specifically, to a magnetic media drive employing amagnetic recording head.

Description of the Related Art

Over the past few years, various magnetic recording methods have beenstudied to improve the areal density of a magnetic media device, such asa hard disk drive (HDD). For example, a perpendicular magnetic recording(PMR) system records data as magnetizations oriented perpendicular tothe plane of a magnetic disk. The magnetic disk has a magnetically softunderlayer covered by a thin magnetically hard top layer. Theperpendicular write head has a main pole with a small cross section anda trailing shield (or return pole) having a much larger cross section. Astrong, highly concentrated magnetic field emits from the main pole in adirection perpendicular to the magnetic disk surface, magnetizing themagnetically hard top layer. The resulting magnetic flux then travelsthrough the soft underlayer, returning to the trailing shield where themagnetic flux is sufficiently spread out and weak that it will not erasethe signal recorded by the main pole when the magnetic flux passes backthrough the magnetically hard top layer to the trailing shield.

Conventionally, the gap between the main pole and the trailing shield(or a trailing shield hot seed layer that is coupled to the trailingshield) is small, such as between about 20 nanometers (nm) and about 30nm, in order to increase magnetic field gradients and allow the writehead to have a more precise resolution. The gap is typically filled witha non-magnetic electrical insulating material, such as alumina. However,due to the close proximity of the main pole and the trailing shield (ortrailing shield hot seed layer), the magnetic flux can shunt from themain pole to the trailing shield (or trailing shield hot seed layer).

Therefore, there is a need in the art for an improved data storagedevice.

SUMMARY OF THE DISCLOSURE

The present disclosure generally relates to data storage devices, andmore specifically, to a magnetic media drive employing a magneticrecording head. The head includes a main pole at a media facing surface(MFS), a trailing shield at the MFS, and a heavy metal layer disposedbetween the main pole and the trailing shield at the MFS. Spin-orbittorque (SOT) is generated from the heavy metal layer and transferred toa surface of the main pole as a current passes through the heavy metallayer in a cross-track direction. The SOT executes a torque on thesurface magnetization of the main pole, which reduces the magnetic fluxshunting from the main pole to the trailing shield. With the reducedmagnetic flux shunting from the main pole to the trailing shield,write-ability is improved.

In one embodiment, a magnetic recording head includes a main pole, atrailing shield, and a heavy metal layer disposed between the main poleand the trailing shield, wherein the heavy metal layer is in contactwith the main pole.

In another embodiment, a magnetic recording head includes a main pole, atrailing shield, an intermediate layer disposed between the main poleand the trailing shield, wherein the intermediate layer is in contactwith the main pole, and a heavy metal layer in contact with theintermediate layer.

In another embodiment, a data storage device includes a magnetic writehead including a trailing shield hot seed layer, a main pole, and aheavy metal structure surrounding two or more surfaces of the main poleat a media facing surface, wherein the heavy metal structure is incontact with the two or more surfaces of the main pole.

In another embodiment, a magnetic recording head includes a main poleand means for generating spin-orbit torque on a surface of the mainpole.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 is a schematic illustration of a magnetic media device accordingto one embodiment.

FIG. 2 is a fragmented, cross sectional side view of a read/write headfacing a magnetic disk according to one embodiment.

FIG. 3 is a cross sectional side view of a portion of a write headaccording to one embodiment.

FIGS. 4A-4B are perspective MFS views of a portion of the write head ofFIG. 2 according to embodiments.

FIGS. 5A-5B are perspective MFS views of a portion of the write head ofFIG. 2 according to embodiments.

FIGS. 6A-6B are perspective MFS views of a portion of the write head ofFIG. 2 according to embodiments.

FIGS. 7A-7B are MFS views of a portion of the write head of FIG. 2according to embodiments.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

The present disclosure generally relates to data storage devices, andmore specifically, to a magnetic media drive employing a magneticrecording head. The head includes a main pole at a media facing surface(MFS), a trailing shield at the MFS, and a heavy metal layer disposedbetween the main pole and the trailing shield at the MFS. Spin-orbittorque (SOT) is generated from the heavy metal layer and transferred toa surface of the main pole as a current passes through the heavy metallayer in a cross-track direction. The SOT executes a torque on thesurface magnetization of the main pole, which reduces the magnetic fluxshunting from the main pole to the trailing shield. With the reducedmagnetic flux shunting from the main pole to the trailing shield,write-ability is improved.

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one layer with respect to other layers. As such,for example, one layer disposed over or under another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. Moreover, one layer disposed between layers may bedirectly in contact with the two layers or may have one or moreintervening layers. In contrast, a first layer “on” a second layer is incontact with the second layer. Additionally, the relative position ofone layer with respect to other layers is provided assuming operationsare performed relative to a substrate without consideration of theabsolute orientation of the substrate.

FIG. 1 is a schematic illustration of a data storage device such as amagnetic media device. Such a data storage device may be a singledrive/device or comprise multiple drives/devices. For the sake ofillustration, a single disk drive 100 is shown according to oneembodiment. As shown, at least one rotatable magnetic disk 112 issupported on a spindle 114 and rotated by a drive motor 118. Themagnetic recording on each magnetic disk 112 is in the form of anysuitable patterns of data tracks, such as annular patterns of concentricdata tracks (not shown) on the magnetic disk 112.

At least one slider 113 is positioned near the magnetic disk 112, eachslider 113 supporting one or more magnetic head assemblies 121 that mayinclude a heavy metal layer for generating SOT on a surface of a mainpole. As the magnetic disk 112 rotates, the slider 113 moves radially inand out over the disk surface 122 so that the magnetic head assembly 121may access different tracks of the magnetic disk 112 where desired dataare written. Each slider 113 is attached to an actuator arm 119 by wayof a suspension 115. The suspension 115 provides a slight spring forcewhich biases the slider 113 toward the disk surface 122. Each actuatorarm 119 is attached to an actuator means 127. The actuator means 127 asshown in FIG. 1 may be a voice coil motor (VCM). The VCM includes a coilmovable within a fixed magnetic field, the direction and speed of thecoil movements being controlled by the motor current signals supplied bycontrol unit 129.

During operation of the disk drive 100, the rotation of the magneticdisk 112 generates an air bearing between the slider 113 and the disksurface 122 which exerts an upward force or lift on the slider 113. Theair bearing thus counter-balances the slight spring force of suspension115 and supports slider 113 off and slightly above the disk surface 122by a small, substantially constant spacing during normal operation.

The various components of the disk drive 100 are controlled in operationby control signals generated by control unit 129, such as access controlsignals and internal clock signals. Typically, the control unit 129comprises logic control circuits, storage means and a microprocessor.The control unit 129 generates control signals to control various systemoperations such as drive motor control signals on line 123 and headposition and seek control signals on line 128. The control signals online 128 provide the desired current profiles to optimally move andposition slider 113 to the desired data track on disk 112. Write andread signals are communicated to and from write and read heads on theassembly 121 by way of recording channel 125.

The above description of a typical magnetic media device and theaccompanying illustration of FIG. 1 are for representation purposesonly. It should be apparent that magnetic media devices may contain alarge number of media, or disks, and actuators, and each actuator maysupport a number of sliders.

FIG. 2 is a fragmented, cross sectional side view of a read/write head200 facing the magnetic disk 112 according to one embodiment. Theread/write head 200 may correspond to the magnetic head assembly 121described in FIG. 1. The read/write head 200 includes a MFS 212, such asan air bearing surface (ABS), facing the disk 112, a magnetic write head210, and a magnetic read head 211. As shown in FIG. 2, the magnetic disk112 moves past the write head 210 in the direction indicated by thearrow 232 and the read/write head 200 moves in the direction indicatedby the arrow 234.

In some embodiments, the magnetic read head 211 is a magnetoresistive(MR) read head that includes an MR sensing element 204 located betweenMR shields S1 and S2. In other embodiments, the magnetic read head 211is a magnetic tunnel junction (MTJ) read head that includes a MTJsensing device 204 located between MR shields S1 and S2. The magneticfields of the adjacent magnetized regions in the magnetic disk 112 aredetectable by the MR (or MTJ) sensing element 204 as the recorded bits.

The write head 210 includes a main pole 220, a leading shield 206, atrailing shield 240, a heavy metal layer 250 coupled to the main pole220, and a coil 218 that excites the main pole 220. The coil 218 mayhave a “pancake” structure which winds around a back-contact between themain pole 220 and the trailing shield 240, instead of a “helical”structure shown in FIG. 2. A trailing shield hot seed layer 241 iscoupled to the trailing shield 240, and the trailing shield hot seedlayer 241 faces the heavy metal layer 250. The definition of the term“face” is extended to include a material located between a first elementthat is facing a second element and the second element. For example, thetrailing shield hot seed layer 241 faces the heavy metal layer 250, anda dielectric material 254, such as alumina, is located between thetrailing shield hot seed layer 241 and the heavy metal layer 250. Thedielectric material 254 is also disposed between the leading shield 206and the main pole 220. The main pole 220 includes a trailing taper 242and a leading taper 244. The trailing taper 242 extends from a locationrecessed from the MFS 212 to the MFS 212. The leading taper 244 extendsfrom a location recessed from the MFS 212 to the MFS 212. The trailingtaper 242 and the leading taper 244 may have the same degree of taper,and the degree of taper is measured with respect to a longitudinal axis260 of the main pole 220. In some embodiments, the main pole 220 doesnot include the trailing taper 242 and the leading taper 244. Instead,the main pole 220 includes a trailing side (not shown) and a leadingside (not shown), and the trailing side and the leading side aresubstantially parallel. The main pole 220 may be a magnetic materialsuch as a FeCo alloy. The leading shield 206 and the trailing shield 240may be a magnetic material, such as NiFe alloy. The trailing shield hotseed layer 241 may include a high moment sputter material, such as CoFeNor FeXN, where X includes at least one of Rh, Al, Ta, Zr, and Ti.

The heavy metal layer 250 may be beta phase Tantalum (β-Ta), beta phasetungsten (β-W), or platinum (Pt). The heavy metal layer 250 is directlycoupled to the main pole 220. For example, the heavy metal layer 250 isin direct contact with the trailing taper 242 of the main pole 220, asshown in FIG. 2. In some embodiments, an intermediate layer may bedisposed between the heavy metal layer 250 and the main pole 220. Insome embodiments, the heavy metal layer 250 is a heavy metal structurethat surrounds two or more surfaces of the main pole 220 at the MFS 212,such as three surfaces of the main pole 220. The heavy metal layer 250extends from the MFS 212 to a location within the write head 210 that isa distance D₁ from the MFS 212. The trailing shield hot seed layer 241extends from the MFS 212 to a location within the write head 210 that isa distance D₂ from the MFS 212. The distance D₁ is greater than thedistance D₂ to effectively reduce magnetic flux shunting from the mainpole 220 to the trailing shield hot seed layer 241. In one embodiment,the distance D₁ ranges from about 10 nm to about 2 microns.

During operation, an electrical current flows through the heavy metallayer 250, which has strong spin-orbit coupling, and the heavy metallayer 250 generates SOT. The SOT generated by the heavy metal layer 250is transferred to a surface of the main pole 220, such as the trailingtaper 242. The SOT effect on the main pole 220 reduces magnetic fluxshunting, which improves write-ability, because the SOT executes atorque on the surface magnetization of the main pole 220. The currentflows through the heavy metal layer 250 in the cross-track direction, asindicated by the Z-axis. With the reduced magnetic flux shunting fromthe main pole 220 to the trailing shield 240 (or the trailing shield hotseed layer 241), the write gap WG can be reduced to increase write fieldgradient. The write gap WG is defined as the distance between the mainpole 220 and the trailing shield hot seed layer 241 at the MFS 212, asshown in FIG. 2. The conventional write gap ranges from about 20 nm toabout 30 nm. The write gap WG with the heavy metal layer 250 is lessthan 20 nm. The thickness of the heavy metal layer 250 in the down-trackdirection (as indicated by X-axis) ranges from about 5 nm to less thanabout 20 nm, such as about 10 nm.

FIG. 3 is a cross sectional side view of a portion of a write head 210according to one embodiment. As shown in FIG. 3, the write head 210includes the trailing shield 240, the trailing shield hot seed layer241, the main pole 220, and the leading shield 206. The main poleincludes the trailing taper 242, the leading taper 244 opposite thetrailing taper 242, and a first surface 304 connecting the trailingtaper 242 and the leading taper 244. The first surface 304 is located atthe MFS 212. The write head 210 further includes a heavy metal layer 302disposed between the trailing shield hot seed layer 241 and the mainpole 220. The heavy metal layer is disposed at the MFS 212, as shown inFIG. 3. In some embodiments, the heavy metal layer may be recessed fromthe MFS 212. The heavy metal layer 302 is fabricated from the samematerial as the heavy metal layer 250. The dielectric material 254 isdisposed between the leading shield 206 and the main pole 220, and thedielectric material 254 extends to the MFS 212 between the leadingshield 206 and the main pole 220. The dielectric material 254 disposedbetween the trailing shield hot seed layer 241 and the main pole 220does not extend to the MFS 212 and is disposed away from the MFS 212between the trailing shield hot seed layer 241 and the main pole 220.The heavy metal layer 302 extends to the MFS 212 and is in contact withboth main pole 220 and the trailing shield hot seed layer 241.

The heavy metal layer 302 includes a first surface 306 that is incontact with the trailing taper 242 of the main pole 220, a secondsurface 308 in contact with the trailing shield hot seed layer 241, anda third surface 310 connecting the first surface 306 and the secondsurface 308. The third surface 310 is at the MFS 212. With the heavymetal layer 302 in contact with both the main pole 220 and the trailingshield hot seed layer 241, the SOT generated from the heavy metal layer302 is transferred to both the main pole 220 and the trailing shield hotseed layer 241, and the SOT effect on surfaces of the main pole 220 andthe trailing shield hot seed layer 241 reduces magnetic flux shuntingfrom the main pole 220 to the trailing shield hot seed layer 241. TheSOT executes a torque on the surface magnetization of the main pole 220and the trailing shield 240 (or the trailing shield hot seed layer 241),which improves write-ability. In some embodiments, the heavy metal layer302 is a heavy metal structure that surrounds two or more surfaces ofthe main pole 220, such as three surfaces of the main pole 220.

The heavy metal layer 302 extends from the MFS 212 to a location withinthe write head 210 that is a distance D₃ from the MFS 212. In oneembodiment, the distance D₃ ranges from about 10 nm to about 2 microns.The portion of the trailing shield hot seed layer 241 that is in contactwith the heavy metal layer 302 extends from the MFS 212 to a locationwithin the write head 210 that is a distance D₄ from the MFS 212. Thedistance D₃ is greater than the distance D₄ to effectively reducemagnetic flux shunting from the main pole 220 to the trailing shield hotseed layer 241. With the reduced magnetic flux shunting from the mainpole 220 to the trailing shield 240 (or the trailing shield hot seedlayer 241), the write gap WG can be reduced to increase the write fieldgradient. The write gap WG, which is also the thickness of the heavymetal layer 302 in the down-track direction (as indicated by X-axis), isless than about 20 nm. In one embodiment, the thickness of the heavymetal layer 302 ranges from about 5 nm to less than about 20 nm, such asabout 10 nm.

FIGS. 4A-4B are perspective MFS views of a portion of the write head 210of FIG. 2 according to at least one embodiment. The dielectric material254 is omitted in FIGS. 4A and 4B for better illustration. As shown inFIG. 4A, the write head 210 includes the main pole 220 and a heavy metallayer 401 coupled to the main pole 220. The heavy metal layer 401 isfabricated from the same material as the heavy metal layer 250. Theheavy metal layer 401 is disposed between the main pole 220 and thetrailing shield hot seed layer 241 (FIG. 2). The heavy metal layer 401includes a first surface 402 at the MFS 212, a second surface 404opposite the first surface 402, a third surface 406 connecting the firstsurface 402 and the second surface 404, a fourth surface 408 oppositethe third surface 406, and a fifth surface 410 connecting the first,second, third, and fourth surfaces 402, 404, 406, 408. In oneembodiment, the fifth surface 410 faces the trailing shield hot seedlayer 241, and the heavy metal layer 401 has a first thickness (in thedown-track direction) ranging from about 5 nm to less than about 20 nm.The dielectric material 254 is disposed between the surface 410 and thetrailing shield hot seed layer 241 (FIG. 2). In another embodiment, thefifth surface 410 is in contact with the trailing shield hot seed layer241 (FIG. 3), and the heavy metal layer 401 has a second thickness (inthe down-track direction) ranging from about 5 nm to less than about 20nm. The second thickness is greater than the first thickness.

The first surface 402 of the heavy metal layer 401 is co-planar with thesurface 304 of the main pole 220, and the first surface 402 has a widthW₁ (in the cross-track direction). The second surface 404 is locatedwithin the write head 210 at a distance from the MFS 212. The distancemay be the distance D₁ (FIG. 2) or distance D₃ (FIG. 3). The secondsurface 404 has a width W₂ (in the cross-track direction) that issubstantially greater than the width W₁. The trailing taper 242 of themain pole 220 has a width W₃ (in the cross-track direction) at the MFS212, and the width W₃ is substantially the same as the width W₁ of thefirst surface 402 of the heavy metal layer 401. The third surface 406has a length L₁ (in a direction from the MFS 212 into the write head210) and the fourth surface 408 has a length L₂ (in a direction from theMFS 212 into the write head 210). The heavy metal layer 401 is incontact with the trailing taper 242 and conforms to the shape of thetrailing taper 242. In one embodiment, the heavy metal layer 401 has atrapezoidal shape. In one embodiment, the length L₁ of the third surface406 is substantially the same as the length L₂ of the fourth surface408, and the heavy metal layer 401 has an isosceles trapezoidal shape.The length L₁ of the third surface 406 may be different from the lengthL₂ of the fourth surface 408. The heavy metal layer 401 may be the heavymetal layer 250 (FIG. 2) or the heavy metal layer 302 (FIG. 3).

FIG. 4B is a perspective MFS view of a portion of the write head 210 ofFIG. 2 according to another embodiment. As shown in FIG. 4B, anintermediate layer 412 is disposed between the heavy metal layer 401 andthe main pole 220. The intermediate layer 412 is in contact with thetrailing taper 242 of the main pole 220 and the heavy metal layer 401.As the current flows through the heavy metal layer 401, there can becurrent shunting from the heavy metal layer 401 to the main pole 220 andthe trailing shield hot seed layer 241. In order to reduce currentshunting from the heavy metal layer 401 to the main pole 220 and thetrailing shield hot seed layer 241, the intermediate layer 412 isutilized. The intermediate layer 412 is a magnetic material having ahigh electrical resistivity. For example, the intermediate layer 412 isfabricated from Fe—Co-M, where M is one or more of the following: B, Si,P, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni. In anotherexample, the intermediate layer 412 is fabricated from Fe—Co-M-MeO_(x)granular film, where Me is Si, Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr andM is one or more of the following: B, Si, Al, Hf, Zr, Nb, Ti, Ta, Mo,Mg, Y, Cu, Cr, and Ni. In another example, the intermediate layer 412 isfabricated from (Fe—Co-M-MeO_(x))_(n) multilayer film, where Me is Si,Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr and M is one or more of thefollowing: B, Si, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni. Inanother example, the intermediate layer 412 is fabricated fromNi—Mn—Mg—Zn—FeO_(x) soft ferrites. In another example, the intermediatelayer 412 is fabricated from Fe—Co-M-(Ni—Mn—Mg—Zn—FeO_(x)) granularfilm, where M is one or more of the following: B, Si, P, Al, Hf, Zr, Nb,Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni. In another example, the intermediatelayer 412 is fabricated from Fe—Co-M-(Ni—Mn—Mg—Zn—FeO_(x))_(n)multilayer film, where M is one or more of the following: B, Si, P, Al,Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu, Cr, and Ni. In embodiment, theintermediate layer 412 is fabricated from Co_(19.5)Fe₅₃Hf₈O_(19.5). Theintermediate layer 412 has a higher electrical resistivity than theheavy metal layer 401. The intermediate layer 412 is fabricated from amagnetic material to magnetically exchange couple to the main pole andthe trailing shield. The intermediate layer 412 may be disposed betweenthe heavy metal layer 250 and the main pole 220 (FIG. 2). Theintermediate layer 412 may be disposed between the heavy metal layer 302and the main pole 220 and between the heavy metal layer 302 and thetrailing shield hot seed layer 241 (FIG. 3).

The intermediate layer 412 has the same shape as the heavy metal layer401. The intermediate layer 412 has the first surface 414 at the MFS, asecond surface 416 opposite the first surface 414, a third surface 418connecting the first surface 414 and the second surface 416, and afourth surface 420 opposite the third surface 418. The first surface 414of the intermediate layer 412 is co-planar with the first surface 402 ofthe heavy metal layer 401, the second surface 416 is co-planar with thesecond surface 404 of the heavy metal layer 401, the third surface 418is co-planar with the third surface 406 of the heavy metal layer 401,and the fourth surface 420 is co-planar with the fourth surface 408.

FIGS. 5A-5B are perspective MFS views of a portion of the write head ofFIG. 2 according to at least one embodiment. The dielectric material 254is omitted in FIGS. 5A and 5B for better illustration. As shown in FIG.5A, the main pole 220 includes the trailing taper 242, the leading taper244 opposite the trailing taper 242, the first surface 304 at the MFS, asecond surface 504 connecting the trailing taper 242 and the leadingtaper 244, and a third surface 506 opposite the second surface 504. Thewrite head 210 further includes a heavy metal structure 508 disposed atthe MFS 212. The heavy metal structure 508 is fabricated from the samematerial as the heavy metal layer 250. The heavy metal structuresurrounding two or more surfaces of the main pole 220. In oneembodiment, as shown in FIG. 5A, the heavy metal structure 508 surroundsthree surfaces of the main pole 220 at the MFS 212.

The heavy metal structure 508 includes a first portion 510 in contactwith the trailing taper 242, a second portion 512 connected to the firstportion 510, and a third portion 514 opposite the second portion 512. Inone embodiment, the first portion 510 faces the trailing shield hot seedlayer 241, and the first portion 510 has a first thickness (in thedown-track direction) ranging from about 5 nm to less than about 20 nm.The dielectric material 254 is disposed between the first portion 510and the trailing shield hot seed layer 241 (FIG. 2). In anotherembodiment, the first portion 510 is in contact with the trailing shieldhot seed layer 241 (FIG. 3), and the first portion 510 has a secondthickness (in the down-track direction) ranging from about 5 nm to lessthan about 20 nm. The second thickness is greater than the firstthickness. The first portion 510 is in contact with the trailing taper242 and conforms to the shape of the trailing taper 242. The secondportion 512 is in contact with the second surface 504 and conforms tothe shape of the second surface 504 of the main pole 220. The thirdportion 514 is in contact with the third surface 506 and conforms to theshape of the third surface 506 of the main pole 220. In one embodiment,the first portion 510, the second portion 512, and the third portion 514are trapezoidal. The leading taper 244 is not surrounded by the heavymetal structure 508. The leading taper 244 is in contact with thedielectric material 254 (FIG. 2). The heavy metal structure 508 mayreplace the heavy metal layer 250 (FIG. 2) or the heavy metal layer 302(FIG. 3).

FIG. 5B is a perspective MFS view of a portion of the write head 210 ofFIG. 2 according to another embodiment. As shown in FIG. 5B, anintermediate layer 520 is disposed between the heavy metal structure 508and the main pole 220. The intermediate layer 520 is in contact with twoor more surfaces of the main pole 220 and the heavy metal structure 508.The intermediate layer 520 is fabricated from the same material as theintermediate layer 412. The intermediate layer 520 is utilized to reducecurrent shunting from the heavy metal structure 508 to the main pole 220and the trailing shield hot seed layer 241. As shown in FIG. 5B, theintermediate layer 520 has a first portion 522 in contact with thetrailing taper 242, a second portion 524 connected to the first portion522, and a third portion 526 opposite the second portion 524. The secondportion 524 is in contact with the second surface 504 of the main pole220, and the third portion 526 is in contact with the third surface 506of the main pole 220. The first portion 522 is sandwiched between thetrailing taper 242 and the first portion 510 of the heavy metalstructure 508, the second portion 524 is sandwiched between the secondsurface 504 of the main pole 220 and the second portion 512 of the heavymetal structure 508, and the third portion 526 is sandwiched between thethird surface 506 of the main pole 220 and the third portion 514 of theheavy metal structure 508. The first portion 522 of the intermediatelayer 520 has the same shape as the first portion 510 of the heavy metalstructure 508, the second portion 524 of the intermediate layer 520 hasthe same shape as the second portion 512 of the heavy metal structure508, and the third portion 526 of the intermediate layer 520 has thesame shape as the third portion 514 of the heavy metal structure 508.The intermediate layer 520 surrounds at least two surfaces of the mainpole 220 at the MFS 212, and the heavy metal structure 508 surrounds theintermediate layer 520. The leading taper 244 is not surrounded by theintermediate structure 520. The leading taper 244 is in contact with thedielectric material 254 (FIG. 2).

FIGS. 6A-6B are perspective MFS views of a portion of the write head 210of FIG. 2 according to at least one embodiment. The dielectric material254 is omitted in FIGS. 6A and 6B for better illustration. As shown inFIG. 6A, the write head 210 includes the main pole 220 and a heavy metallayer 602 coupled to the main pole 220. The heavy metal layer 602 isfabricated from the same material as the heavy metal layer 250. Theheavy metal layer 602 is disposed between the main pole 220 and thetrailing shield hot seed layer 241 (FIG. 2). The heavy metal layer 602includes a first surface 604 at the MFS 212, a second surface 606opposite the first surface 604, a third surface 608 connecting the firstsurface 604 and the second surface 606, a fourth surface 610 oppositethe third surface 608, and a fifth surface 612 connecting the first,second, third, and fourth surfaces 604, 606, 608, 610. In oneembodiment, the fifth surface 612 faces the trailing shield hot seedlayer 241, and the heavy metal layer 602 has a first thickness (in thedown-track direction) ranging from about 5 nm to less than about 20 nm.The dielectric material 254 is disposed between the fifth surface 612and the trailing shield hot seed layer 241 (FIG. 2). In anotherembodiment, the fifth surface 612 is in contact with the trailing shieldhot seed layer 241 (FIG. 3), and the heavy metal layer 602 has a secondthickness (in the down-track direction) ranging from about 5 nm to lessthan about 20 nm. The second thickness is greater than the firstthickness.

The first surface 604 of the heavy metal layer 602 is co-planar with thesurface 304 of the main pole 220. The second surface 606 is locatedwithin the write head 210 at a distance from the MFS 212. The distancemay be the distance D (FIG. 2) or distance D₃ (FIG. 3). The heavy metallayer 602 does not conform to the shape of the trailing taper 242. Inone embodiment, the first surface 604 is substantially parallel to thesecond surface 606, and the third surface 608 is substantially parallelto the fourth surface 610. In one embodiment, the heavy metal layer 602has a rectangular shape, as shown in FIG. 6A. The heavy metal layer 602may be the heavy metal layer 250 (FIG. 2) or the heavy metal layer 302(FIG. 3).

FIG. 6B is a perspective MFS view of a portion of the write head 210 ofFIG. 2 according to another embodiment. As shown in FIG. 6B, theintermediate layer 412 is disposed between the heavy metal layer 602 andthe main pole 220. The intermediate layer 412 is in contact with themain pole 220 and the heavy metal layer 602. The intermediate layer 412is utilized to reduce current shunting from the heavy metal layer 602 tothe main pole 220 and the trailing shield hot seed layer 241. Theintermediate layer 412 conforms to the shape of the trailing taper 242.The trailing taper 242 has the width W₃ at the MFS 212, the surface 604of the heavy metal layer 602 has a width W₄ (in the cross-trackdirection) at the MFS 212, and the surface 414 of the intermediate layer412 has a width W₅ (in the cross-track direction) at the MFS 212. Thewidth W₄ is substantially greater than the width W₃. In one embodiment,the width W₅ is substantially the same as the width W₃. In someembodiments, the intermediate layer 412 conforms to the shape of theheavy metal layer 602. In one embodiment, the intermediate layer 412 isrectangular and the width W₅ is substantially the same as the width W₄.The intermediate layer 412 may be disposed between the heavy metal layer602 and the main pole 220 and between the heavy metal layer 602 and thetrailing shield hot seed layer 241 (FIG. 3).

FIGS. 7A-7B are MFS views of a portion of the write head 210 of FIG. 2according to at least one embodiment. The dielectric material 254 isomitted in FIGS. 6A and 6B for better illustration. As shown in FIG. 7A,the write head 210 includes the trailing shield hot seed layer 241, themain pole 220, and the heavy metal layer 602 disposed between thetrailing shield hot seed layer 241 and the main pole 220. The trailingshield hot seed layer 241 includes a notch 702, and the notch 702includes a surface 704 in contact with the heavy metal layer 602. Thesurface 704 of the notch 702 has a width W₆ (in the cross-trackdirection) at the MFS 212, and the width W₆ is substantially less thanthe width W₄ of the heavy metal layer 602. In one embodiment, the widthW₆ is substantially the same as the width W₃ of the main pole.

FIG. 7B is a perspective MFS view of a portion of the write head 210 ofFIG. 2 according to another embodiment. As shown in FIG. 7B, theintermediate layer 412 is disposed between the heavy metal layer 602 andthe main pole 220. A second intermediate layer 706 is disposed betweenthe heavy metal layer 602 and the notch 702 of the trailing shield hotseed layer 241. The intermediate layer 706 is fabricated from the samematerial as the intermediate layer 241. In one embodiment, theintermediate layer 706 conforms to the shape of the surface 704 of thenotch 702. In another embodiment, the intermediate layer 706 conforms tothe shape of the heavy metal layer 602. In one embodiment, theintermediate layer 706 has the same shape as the intermediate layer 412.The intermediate layer 706 reduces current shunting from the heavy metallayer 602 to the trailing shield hot seed layer 241.

The benefits of having a heavy metal layer or structure disposed betweenthe main pole and the trailing shield (or trailing shield hot seedlayer) are to reduce magnetic flux shunting from the main pole to thetrailing shield. Furthermore, an intermediate layer made of a magneticmaterial having high electrical resistivity can be disposed between theheavy metal layer and the main pole and between the heavy metal layerand the trailing shield (trailing shield hot seed layer) to reducecurrent shunting from the heavy metal layer to the main pole and thetrailing shield. With reduced current shunting, the SOT generated by theheavy metal layer or structure is more effective, resulting in improvedwrite-ability.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

The invention claimed is:
 1. A magnetic recording head, comprising: amain pole; a trailing shield; an intermediate layer disposed between themain pole and the trailing shield, wherein the intermediate layer is incontact with the main pole; and a heavy metal layer in contact with theintermediate layer, the heavy metal layer comprising a material selectedfrom the group consisting of beta phase tantalum, beta phase tungsten,and platinum.
 2. The magnetic recording head of claim 1, wherein theintermediate layer comprises a material selected from the groupconsisting of Fe-Co-M, Fe-Co-M-MeO_(x) granular film,(Fe-Co-M-MeO_(x))_(n) multilayer film, Ni-Mn-Mg-Zn-FeO_(x) softferrites, Fe-Co-M-(N i-Mn-Mg-Zn-FeO_(x)) granular film, andFe-Co-M-(Ni-Mn-Mg-Zn-FeO_(x))_(n) multilayer film, wherein M is one ormore of the following: B, Si, P, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu,Cr, and Ni, and Me is Si, Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr.
 3. Themagnetic recording head of claim 1, wherein the intermediate layercomprises Co_(19.5)Fe₅₃Hf₈O_(19.5.)
 4. The magnetic recording head ofclaim 1, wherein a shape of the intermediate layer is the same as ashape of the heavy metal layer.
 5. The magnetic recording head of claim1, further comprising a trailing shield hot seed layer coupled to thetrailing shield.
 6. The magnetic recording head of claim 5, wherein theheavy metal layer is in contact with the trailing shield hot seed layer.7. A magnetic recording device, comprising: a magnetic recording head,comprising: a main pole; a trailing shield; an intermediate layerdisposed between the main pole and the trailing shield, wherein theintermediate layer is in contact with the main pole; and a heavy metallayer in contact with the intermediate layer, the heavy metal layercomprising a material selected from the group consisting of beta phasetantalum, beta phase tungsten, and platinum.
 8. A data storage device,comprising: a magnetic write head, comprising: a trailing shield hotseed layer; a main pole; and a heavy metal structure surrounding two ormore surfaces of the main pole at a media facing surface, the heavymetal structure comprising a material selected from the group consistingof beta phase tantalum, beta phase tungsten, and platinum, wherein theheavy metal structure is in contact with the two or more surfaces of themain pole.
 9. The data storage device of claim 8, wherein the heavymetal structure comprises a first portion, a second portion connected tothe first portion, and a third portion opposite the second portion,wherein the first portion is between the trailing shield hot seed layerand the main pole.
 10. The data storage device of claim 9, wherein thefirst portion of the heavy metal structure has a thickness ranging fromabout 5 nm to less than about 20 nm.
 11. The data storage device ofclaim 9, wherein the main pole includes a leading taper, a trailingtaper opposite the leading taper, a first surface at the media facingsurface, a second surface connecting the leading taper and the trailingtaper, and a third surface opposite the second surface, wherein thefirst portion of the heavy metal structure is in contact with thetrailing taper, the second portion of the heavy metal structure is incontact with the second surface of the main pole, and the third portionof the heavy metal structure is in contact with the third surface of themain pole.
 12. The data storage device of claim 11, wherein the leadingtaper of the main pole is in contact with a dielectric material.
 13. Thedata storage device of claim 12, wherein the first portion of the heavymetal structure is in contact with the trailing shield hot seed layer.14. The data storage device of claim 8, wherein the heavy metalstructure surrounds three or more surfaces of the main pole at the mediafacing surface.
 15. A magnetic recording head, comprising: a main pole;and means for generating spin-orbit torque on a surface of the mainpole, wherein the means for generating spin-orbit torque on a surface ofthe main pole surrounds two or more surfaces of the main pole at a mediafacing surface.
 16. The magnetic recording head of claim 15, furthercomprising: an intermediate layer disposed in contact with the main poleand the means for generating spin-orbit torque on a surface of the mainpole.
 17. The magnetic recording head of claim 16, wherein theintermediate layer comprises a material selected from the groupconsisting of Fe-Co-M, Fe-Co-M-MeO_(x) granular film,(Fe-Co-M-MeO_(x))_(n) multilayer film, Ni-Mn-Mg-Zn-FeO_(x) softferrites, Fe-Co-M-(Ni-Mn-Mg-Zn-FeO_(x)) granular film, andFe-Co-M-(Ni-Mn-Mg-Zn-FeO_(x))_(n) multilayer film, wherein M is one ormore of the following: B, Si, P, Al, Hf, Zr, Nb, Ti, Ta, Mo, Mg, Y, Cu,Cr, and Ni, and Me is Si, Al, Hf, Zr, Nb, Ti, Ta, Mg, Y, or Cr.
 18. Themagnetic recording head of claim 16, wherein a shape of the intermediatelayer is the same as a shape of the means for generating spin-orbittorque on a surface of the main pole.
 19. The magnetic recording head ofclaim 15, wherein the means for generating spin-orbit torque on asurface of the main pole is in contact with the two or more surfaces ofthe main pole.
 20. A magnetic recording device, comprising: a magneticrecording head, comprising: a main pole; and means for generatingspin-orbit torque on a surface of the main pole, wherein the means forgenerating spin-orbit torque on a surface of the main pole surrounds twoor more surfaces of the main pole at a media facing surface.